AO8820 v ds i d (at v gs =10v) 7a r ds(on) (at v gs =10v) < 21m w r ds(on) (at v gs =4.5v) < 24m w r ds(on) (at v gs =3.6v) < 28m w r ds(on) (at v gs =2.5v) < 32m w r ds(on) (at v gs =1.8v) < 50m w symbol the AO8820 uses advanced trench technology to provi de excellent r ds(on) , low gate charge and operation with gate voltages as low as 1.8v while retaining a 12v v gs(max) rating. it is esd protected. this device is suitabl e for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. maximum units parameter absolute maximum ratings t a =25c unless otherwise noted 20v esd protected! g1 s1 s1 d1/d2 g2 s2 s2 d1/d2 1 2 3 4 8 7 6 5 top view g2 d2 s2 g1 d1 s1 symbol v ds v gs i dm t j , t stg symbol t 10s steady-state steady-state r q jl maximum junction-to-lead c/w c/w maximum junction-to-ambient a d 53 120 70 v 12 gate-source voltage t a =25c t a =70c maximum junction-to-ambient a typ max 0.96 t a =70c junction and storage temperature range power dissipation b p d parameter -55 to 150 1.5 v maximum units parameter drain-source voltage 20 c/w r q ja 64 89 83 c thermal characteristics units t a =25c i d 7 5.5 30 pulsed drain current c continuous drain current a w 20v common-drain dual n-channel mosfet general description features www.freescale.net.cn 1 / 5
symbol min typ max units bv dss 20 v v ds =16v, v gs =0v 1 t j =55c 5 i gss 10 m a v gs(th) gate threshold voltage 0.5 0.8 1.1 v i d(on) 30 a 13 17.2 21 t j =125c 24 29 15 19.4 24 16 20.7 28 18 25 32 35 50 g fs 25 s v sd 0.65 1 v i s 2.5 a c iss 500 pf c oss 100 pf c rss 52 pf q g 6 9 nc q gs 2 nc q gd 1 nc t 0.2 us electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage on state drain current m a v ds =v gs i d =250 m a v ds =0v, v gs = 10v zero gate voltage drain current gate-body leakage current v gs =3.6v, i d =6a i d =250 m a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =7a i dss r ds(on) m w total gate charge v gs =4.5v, v ds =10v, i d =7a gate source charge gate drain charge v gs =2.5v, i d =5.5a reverse transfer capacitance static drain-source on-resistance i s =1a,v gs =0v v ds =5v, i d =7a v gs =1.8v, i d =2a forward transconductance diode forward voltage v gs =4.5v, i d =6.6a maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters v gs =0v, v ds =10v, f=1mhz switching parameters t d(on) 0.2 us t r 1.5 us t d(off) 7.4 us t f 18 us t rr 9 ns q rr 10 nc body diode reverse recovery time turn-off fall time body diode reverse recovery charge i f =7a, di/dt=100a/ m s turn-on delaytime turn-on rise time turn-off delaytime v gs =5v, v ds =10v, r l =1.4 w , r gen =3 w i f =7a, di/dt=100a/ m s a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the value in any given application depends on the user' s specific board design. b. the power dissipation p d is based on t j(max) =150 c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junct ion temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initialt j =25 c. d. the r q ja is the sum of the thermal impedence from junction t o lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambien t thermal impedence which is measured with the devi ce mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperatur e of t j(max) =150 c. the soa curve provides a single pulse rating. AO8820 20v common-drain dual n-channel mosfet www.freescale.net.cn 2 / 5
typical electrical and thermal characteristics 17 5 2 10 0 18 0 5 10 15 20 0 0.5 1 1.5 2 2.5 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 0 10 20 30 40 50 0 5 10 15 20 r ds(on) (m w w w w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =1.8v i d =2a v gs =4.5v i d =6.6a v gs =10v i d =7a v gs =2.5v i d =5.5a 25 c 125 c v ds =5v v gs =4.5v v gs =10v 0 5 10 15 20 25 30 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =1.5v 2v 3v 4v 10v v gs =3.6v v gs =2.5v v gs =1.8v 40 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 10 20 30 40 50 60 70 80 0 2 4 6 8 10 r ds(on) (m w w w w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =7a 25 c 125 c AO8820 20v common-drain dual n-channel mosfet www.freescale.net.cn 3 / 5
typical electrical and thermal characteristics 0 1 2 3 4 5 0 2 4 6 8 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 0 5 10 15 20 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =10v i d =7a 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 10: single pulse power rating junction-to- ambient (note f) t a =25 c 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased safe 10 m s 10s 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 10ms ambient (note f) figure 9: maximum forward biased safe operating area (note f) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q q q q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =83 c/w AO8820 20v common-drain dual n-channel mosfet www.freescale.net.cn 4 / 5
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform d u t v gs d iode r ecovery t est c ircuit & w aveform s v ds + rr q = - idt - + v d c d u t v d d v g s v ds v g s r l r g v gs v d s 1 0% 90 % r es istiv e s w itch ing t e st c ircu it & w a ve fo rm s t t r d (o n ) t o n t d (o ff) t f t o ff ig v gs - + vd c l v ds isd isd v ds - i f di/dt i r m v dd v dd t rr AO8820 20v common-drain dual n-channel mosfet www.freescale.net.cn 5 / 5
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